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MITSUBISHI SEMICONDUCTOR TRIAC
BCR25A, BCR25B
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
BCR25A, BCR25B
OUTLINE DRAWING
17
Dimensions in mm
(19.6) 3.3 MIN 1.3 MIN 3 3 1 8.0
3
29 MAX 3.7 MIN
1 3
(14)
1.9 MAX 15.5 MAX
2
M6x1.0
1 T1 TERMINAL BCR25A 2 T2 TERMINAL 3 GATE TERMINAL 39 MAX 300.2
* * * *
IT (RMS) ...................................................................... 25A VDRM ..............................................................400V/500V IFGT !, IRGT # ........................................................50mA IRGT !..................................................................... 75mA
2-4.2 MIN 3.3 MIN 1.3 MIN 3
26 MAX
13 MAX
37 MAX
2
8.0
1
8.5 16 MAX
28.5 MAX 2.5 MAX
APPLICATION Contactless AC switches, light dimmer, on/off control of copier lamps
3
14.2 MAX
BCR25B
2
MAXIMUM RATINGS
Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 8 400 600 10 500 600 Unit V V
Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM TI Tstg -- --
Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mounting torque Weight BCR25A only BCR25A (Typical value) BCR25B (Typical value)
Conditions Commercial frequency, sine full wave, 360 conduction, Tc=92C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
Ratings 25 250 262 5.0 0.5 10 2.0 -20 ~ +125 -20 ~ +125 30 2.94 18 23
37 MAX
3
Unit A A A2s W W V A C C kg*cm N*m g
V1. Gate open.
Feb.1999
8.5
MITSUBISHI SEMICONDUCTOR TRIAC
BCR25A, BCR25B
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD Rth (j-c) (dv/dt)c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage Gate trigger current V2 Gate trigger voltage V2 Parameter Repetitive peak off-state current On-state voltage ! @ # ! @ # Tj=125C, VD=1/2VDRM Junction to case Tj=25C, VD=6V, RL=6, RG=330 Tj=25C, VD=6V, RL=6, RG=330 Test conditions Tj=125C, VDRM applied Tc=25C, ITM=40A, Instantaneous measurement Limits Min. -- -- -- -- -- -- -- -- 0.2 --
V3
Typ. -- -- -- -- -- -- -- -- -- -- --
Max. 5.0 1.6 3.0 3.0 3.0 50 75 50 -- 1.0 --
Unit mA V V V V mA mA mA V C/ W V/s
V2. Measurement using the gate trigger characteristics measurement circuit. V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
Voltage class
VDRM (V)
(dv/dt) c Symbol R Min. -- 1. Junction temperature Tj=125C L 20 V/s R -- 2. Rate of decay of on-state commutating current (di/dt)c=-13.5A/ms 3. Peak off-state voltage VD=400V L 20 Unit Test conditions
Commutating voltage and current waveforms (inductive load)
8
400
SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c
TIME
TIME TIME VD
10
500
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS RATED SURGE ON-STATE CURRENT 320
SURGE ON-STATE CURRENT (A)
ON-STATE CURRENT (A)
103 7 TC = 25C 5 3 2 102 7 5 3 2 101 7 5 3 2 100 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 ON-STATE VOLTAGE (V)
280 240 200 160 120 80 40 0 100 2 3 4 5 7 101 2 3 4 5 7 102
CONDUCTION TIME (CYCLES AT 60Hz)
Feb.1999
MITSUBISHI SEMICONDUCTOR TRIAC
BCR25A, BCR25B
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
GATE CHARACTERISTICS 3 2 VGM = 10V
GATE VOLTAGE (V)
101 7 5 VGT = 3.0V 3 2 100 7 5 3 2
PGM = 5.0W IGM = 2A
GATE TRIGGER * CURRENT VOLTAGE (Tj = tC) GATE TRIGGER * CURRENT VOLTAGE (Tj = 25C)
PG(AV) = 0.5W
GATE TRIGGER CURRENT*VOLTAGE VS. JUNCTION TEMPERATURE 200 TEST PROCEDURE , AND 180 160 140 120 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) GATE TRIGGER CURRENT GATE TRIGGER VOLTAGE
IFGT I IRGT I VGD = 0.2V 10-1 IRGT III 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE)
TRANSIENT THERMAL IMPEDANCE (C/W)
100 (%)
ON-STATE POWER DISSIPATION (W)
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1
102
23 5
7 103
MAXIMUM ON-STATE POWER DISSIPATION 50 45 40 360 35 CONDUCTION RESISTIVE, 30 INDUCTIVE 25 LOADS 20 15 10 5 0 0 5 10 15 20 25 30 35 40
0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz)
RMS ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT
AMBIENT TEMPERATURE (C)
CASE TEMPERATURE (C)
CURVES APPLY REGARDLESS 140 OF CONDUCTION ANGLE 120 100 80 60 360 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 4 8 12 0
160
ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT (BCR25A) 160 NATURAL CONVECTION 140 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 120 100 100 t3.0 100 80 60 40 WITHOUT 20 MICA PLATE WITH GREASE 0 4 8 12 16 0 120 120 t3.0 BX 20-06
16
20
24
28
32
20
24
28
32
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR TRIAC
BCR25A, BCR25B
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
AMBIENT TEMPERATURE (C)
100 80 60 40
BREAKOVER VOLTAGE (Tj = tC) BREAKOVER VOLTAGE (Tj = 25C)
ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT (BCR25B) 160 NATURAL CONVECTION 140 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 120 100 100 t3.0 120 120 t3.0 160 160 t4.0
BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE
100 (%)
160 140 120 100 80 60 40 20 0 0 20 40 60
TYPICAL EXAMPLE III QUADRANT
I QUADRANT
WITHOUT 20 MICA PLATE WITH GREASE 0 4 8 12 16 0
20
24
28
32
80 100 120 140 160
RMS ON-STATE CURRENT (A)
JUNCTION TEMPERATURE (C)
CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/s)
COMMUTATION CHARACTERISTICS
GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH
100 (%)
GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC)
VOLTAGE WAVEFORM 3 TYPICAL t 2 EXAMPLE (dv/dt)C VD Tj = 125C 102 7 IT = 4A, = 500s CURRENT WAVEFORM 5 VD = 200V, f = 3Hz (di/dt)C IT 3 t 2
101 7 5 3 2 III QUADRANT 100 7 I QUADRANT 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms)
6 3 TYPICAL A 2 EXAMPLE Tj = 25C 103 6V 7 5 IRGT III 3 IRGT I 2 IFGT I 102 7 5 3 2
P.C
tw
0.1s
101 7 5 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE CURRENT PULSE WIDTH (s)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6 6
6V V
A RG
6V V
A RG
TEST PROCEDURE 1 6
TEST PROCEDURE 2
6V V
A RG
TEST PROCEDURE 3
Feb.1999

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